PN4917 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
PN4917 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Weight
201mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
1997
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Subcategory
Other Transistors
Voltage - Rated DC
-30V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Reach Compliance Code
unknown
Current Rating
-50mA
Base Part Number
PN4917
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Gain Bandwidth Product
450MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 10mA 1V
Current - Collector Cutoff (Max)
25nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
450MHz
Collector Emitter Saturation Voltage
300mV
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
5V
hFE Min
150
Collector-Base Capacitance-Max
4.5pF
RoHS Status
RoHS Compliant
Lead Free
Lead Free
PN4917 Product Details
PN4917 Overview
This device has a DC current gain of 150 @ 10mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 300mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -50mA.A transition frequency of 450MHz is present in the part.Maximum collector currents can be below 200mA volts.
PN4917 Features
the DC current gain for this device is 150 @ 10mA 1V a collector emitter saturation voltage of 300mV the vce saturation(Max) is 300mV @ 5mA, 50mA the emitter base voltage is kept at 5V the current rating of this device is -50mA a transition frequency of 450MHz
PN4917 Applications
There are a lot of ON Semiconductor PN4917 applications of single BJT transistors.