DN0150BLP4-7B Overview
This device has a DC current gain of 200 @ 2mA 6V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 100mA.A 100mA continuous collector voltage is necessary to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The part has a transition frequency of 60MHz.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 100mA volts is possible.
DN0150BLP4-7B Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
DN0150BLP4-7B Applications
There are a lot of Diodes Incorporated DN0150BLP4-7B applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
