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MPSA93G

MPSA93G

MPSA93G

Rochester Electronics, LLC

MPSA93G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

MPSA93G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
JESD-609 Code e1
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
JESD-30 Code O-PBCY-T3
Qualification StatusCOMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 625mW
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 30mA 10V
Current - Collector Cutoff (Max) 250nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max) 200V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 50MHz
Frequency - Transition 50MHz
RoHS StatusROHS3 Compliant
In-Stock:2941 items

MPSA93G Product Details

MPSA93G Overview


DC current gain in this device equals 25 @ 30mA 10V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.The device exhibits a collector-emitter breakdown at 200V.

MPSA93G Features


the DC current gain for this device is 25 @ 30mA 10V
the vce saturation(Max) is 400mV @ 2mA, 20mA
a transition frequency of 50MHz

MPSA93G Applications


There are a lot of Rochester Electronics, LLC MPSA93G applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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