BDW74-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BDW74-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Max Power Dissipation
2W
Base Part Number
BDW74
Pin Count
3
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
2W
Transistor Application
SWITCHING
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 3A 3V
Current - Collector Cutoff (Max)
500μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
4V @ 80mA, 8A
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
2.5V
Collector Base Voltage (VCBO)
45V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
BDW74-S Product Details
BDW74-S Overview
DC current gain in this device equals 750 @ 3A 3V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 2.5V ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 4V @ 80mA, 8A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.The maximum collector current is 8A volts.
BDW74-S Features
the DC current gain for this device is 750 @ 3A 3V a collector emitter saturation voltage of 2.5V the vce saturation(Max) is 4V @ 80mA, 8A the emitter base voltage is kept at 5V
BDW74-S Applications
There are a lot of Bourns Inc. BDW74-S applications of single BJT transistors.