BDW84C-S Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 6A 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 4V @ 150mA, 15A.An emitter's base voltage can be kept at 5V to gain high efficiency.During maximum operation, collector current can be as low as 15A volts.

BDW84C-S Features

the DC current gain for this device is 750 @ 6A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 150mA, 15A
the emitter base voltage is kept at 5V

BDW84C-S Applications

There are a lot of Bourns Inc. BDW84C-S applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface