BDW94B-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BDW94B-S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Power Dissipation
2W
Base Part Number
BDW94
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
2W
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
12A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 5A 3V
Current - Collector Cutoff (Max)
1mA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
3V @ 100mA, 10A
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
BDW94B-S Product Details
BDW94B-S Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 5A 3V.A collector emitter saturation voltage of 2V allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 100mA, 10A.Emitter base voltages of 5V can achieve high levels of efficiency.When collector current reaches its maximum, it can reach 12A volts.
BDW94B-S Features
the DC current gain for this device is 750 @ 5A 3V a collector emitter saturation voltage of 2V the vce saturation(Max) is 3V @ 100mA, 10A the emitter base voltage is kept at 5V
BDW94B-S Applications
There are a lot of Bourns Inc. BDW94B-S applications of single BJT transistors.