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TIP29B-S

TIP29B-S

TIP29B-S

Bourns Inc.

TIP29B-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

TIP29B-S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1993
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 2W
Base Part Number TIP29
Configuration Single
Power - Max 2W
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 700mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A 4V
Current - Collector Cutoff (Max) 300μA
Vce Saturation (Max) @ Ib, Ic 700mV @ 125mA, 1A
Collector Emitter Breakdown Voltage 80V
Collector Base Voltage (VCBO) 120V
Radiation Hardening No
RoHS Status ROHS3 Compliant
TIP29B-S Product Details

TIP29B-S Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 1A 4V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A maximum collector current of 1A volts is possible.

TIP29B-S Features


the DC current gain for this device is 15 @ 1A 4V
the vce saturation(Max) is 700mV @ 125mA, 1A

TIP29B-S Applications


There are a lot of Bourns Inc. TIP29B-S applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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