TIP29B-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
TIP29B-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
2W
Base Part Number
TIP29
Configuration
Single
Power - Max
2W
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
700mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 1A 4V
Current - Collector Cutoff (Max)
300μA
Vce Saturation (Max) @ Ib, Ic
700mV @ 125mA, 1A
Collector Emitter Breakdown Voltage
80V
Collector Base Voltage (VCBO)
120V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
TIP29B-S Product Details
TIP29B-S Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 1A 4V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A maximum collector current of 1A volts is possible.
TIP29B-S Features
the DC current gain for this device is 15 @ 1A 4V the vce saturation(Max) is 700mV @ 125mA, 1A
TIP29B-S Applications
There are a lot of Bourns Inc. TIP29B-S applications of single BJT transistors.