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TIP32B-S

TIP32B-S

TIP32B-S

Bourns Inc.

TIP32B-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

TIP32B-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 1993
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Max Power Dissipation40W
Base Part Number TIP32
Configuration Single
Power - Max 40W
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 1.2V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A 4V
Current - Collector Cutoff (Max) 300μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage80V
Collector Base Voltage (VCBO) 120V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:4525 items

TIP32B-S Product Details

TIP32B-S Overview


In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.2V @ 375mA, 3A means Ic has reached its maximum value(saturated).Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

TIP32B-S Features


the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A

TIP32B-S Applications


There are a lot of Bourns Inc. TIP32B-S applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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