TIP32B-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
TIP32B-S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
Other Transistors
Max Power Dissipation
40W
Base Part Number
TIP32
Configuration
Single
Power - Max
40W
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
1.2V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 3A 4V
Current - Collector Cutoff (Max)
300μA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage
80V
Collector Base Voltage (VCBO)
120V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
TIP32B-S Product Details
TIP32B-S Overview
In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.2V @ 375mA, 3A means Ic has reached its maximum value(saturated).Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
TIP32B-S Features
the DC current gain for this device is 10 @ 3A 4V the vce saturation(Max) is 1.2V @ 375mA, 3A
TIP32B-S Applications
There are a lot of Bourns Inc. TIP32B-S applications of single BJT transistors.