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2N4410

  • 2N4410
  • 2N4410

2N4410

2N4410

Rochester Electronics, LLC

2N4410 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

2N4410 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
JESD-30 Code O-PBCY-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 625mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 1V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 100μA, 1mA
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 200mA
RoHS Status ROHS3 Compliant
2N4410 Product Details

2N4410 Overview


This device has a DC current gain of 60 @ 10mA 1V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 100μA, 1mA.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.

2N4410 Features


the DC current gain for this device is 60 @ 10mA 1V
the vce saturation(Max) is 200mV @ 100μA, 1mA

2N4410 Applications


There are a lot of Rochester Electronics, LLC 2N4410 applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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