2SB1243TV2Q Overview

DC current gain in this device equals 120 @ 500mA 3V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 200mA, 2A.The emitter base voltage can be kept at -5V for high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 70MHz.The breakdown input voltage is 50V volts.The device exhibits a collector-emitter breakdown at 50V.Single BJT transistor is possible to have a collector current as low as 700mA volts at Single BJT transistors maximum.

2SB1243TV2Q Features

the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 70MHz

2SB1243TV2Q Applications

There are a lot of ROHM Semiconductor 2SB1243TV2Q applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver