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TIP34A-S

TIP34A-S

TIP34A-S

Bourns Inc.

TIP34A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

TIP34A-S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-218-3
Number of Pins 3
Supplier Device Package SOT-93
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1993
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 3.5W
Base Part Number TIP34
Number of Elements 1
Polarity PNP
Power Dissipation 80W
Power - Max 3.5W
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 3A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 4V @ 2.5A, 10A
Collector Emitter Breakdown Voltage 60V
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 10A
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
RoHS Status ROHS3 Compliant
TIP34A-S Product Details

TIP34A-S Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 3A 4V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 4V @ 2.5A, 10A.An emitter's base voltage can be kept at 5V to gain high efficiency.Product comes in SOT-93 supplier package.There is a 60V maximal voltage in the device due to collector-emitter breakdown.In extreme cases, the collector current can be as low as 10A volts.

TIP34A-S Features


the DC current gain for this device is 20 @ 3A 4V
the vce saturation(Max) is 4V @ 2.5A, 10A
the emitter base voltage is kept at 5V
the supplier device package of SOT-93

TIP34A-S Applications


There are a lot of Bourns Inc. TIP34A-S applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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