2STC4467 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
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2STC4467 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
80W
Peak Reflow Temperature (Cel)
260
Frequency
20MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
2STC
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
80W
Transistor Application
SWITCHING
Gain Bandwidth Product
20MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
120V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 3A 4V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 300mA, 3A
Collector Emitter Breakdown Voltage
120V
Transition Frequency
20MHz
Max Breakdown Voltage
120V
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.613823
$2.613823
10
$2.465871
$24.65871
100
$2.326294
$232.6294
500
$2.194617
$1097.3085
1000
$2.070393
$2070.393
2STC4467 Product Details
2STC4467 Overview
In this device, the DC current gain is 70 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 300mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.As a result, the part has a transition frequency of 20MHz.Single BJT transistor can be broken down at a voltage of 120V volts.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
2STC4467 Features
the DC current gain for this device is 70 @ 3A 4V the vce saturation(Max) is 1.5V @ 300mA, 3A the emitter base voltage is kept at 6V a transition frequency of 20MHz
2STC4467 Applications
There are a lot of STMicroelectronics 2STC4467 applications of single BJT transistors.