KST5551MTF Overview

DC current gain in this device equals 80 @ 10mA 5V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 200mV ensures maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.The current rating of this fuse is 600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.Breakdown input voltage is 160V volts.During maximum operation, collector current can be as low as 600mA volts.

KST5551MTF Features

the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz

KST5551MTF Applications

There are a lot of ON Semiconductor KST5551MTF applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting