2N2218A PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N2218A PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
34 Weeks
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
800mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
800mA
Frequency - Transition
250MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.12000
$2.12
500
$2.0988
$1049.4
1000
$2.0776
$2077.6
1500
$2.0564
$3084.6
2000
$2.0352
$4070.4
2500
$2.014
$5035
2N2218A PBFREE Product Details
2N2218A PBFREE Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.Detection of Collector Emitter Breakdown at 40V maximal voltage is present.
2N2218A PBFREE Features
the DC current gain for this device is 40 @ 150mA 10V the vce saturation(Max) is 1V @ 50mA, 500mA
2N2218A PBFREE Applications
There are a lot of Central Semiconductor Corp 2N2218A PBFREE applications of single BJT transistors.