2SD1628F-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SD1628F-TD-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
500mW
Reach Compliance Code
not_compliant
Pin Count
3
Power - Max
500mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 60mA, 3A
Collector Emitter Breakdown Voltage
20V
Frequency - Transition
120MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
hFE Min
120
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.596614
$1.596614
10
$1.506240
$15.0624
100
$1.420981
$142.0981
500
$1.340548
$670.274
1000
$1.264668
$1264.668
2SD1628F-TD-E Product Details
2SD1628F-TD-E Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 500mA 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 60mA, 3A.Emitter base voltages of 6V can achieve high levels of efficiency.A maximum collector current of 5A volts can be achieved.
2SD1628F-TD-E Features
the DC current gain for this device is 160 @ 500mA 2V the vce saturation(Max) is 500mV @ 60mA, 3A the emitter base voltage is kept at 6V
2SD1628F-TD-E Applications
There are a lot of ON Semiconductor 2SD1628F-TD-E applications of single BJT transistors.