PBSS5480XZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS5480XZ Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-243AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Number of Terminations
3
Terminal Position
SINGLE
Terminal Form
FLAT
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
380mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
4A
Transition Frequency
125MHz
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$0.22100
$0.221
PBSS5480XZ Product Details
PBSS5480XZ Overview
In this device, the DC current gain is 200 @ 500mA 2V, which is the ratio between the base current and the collector current.When VCE saturation is 380mV @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).In this part, there is a transition frequency of 125MHz.Single BJT transistor shows a 80V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
PBSS5480XZ Features
the DC current gain for this device is 200 @ 500mA 2V the vce saturation(Max) is 380mV @ 500mA, 5A a transition frequency of 125MHz
PBSS5480XZ Applications
There are a lot of Nexperia USA Inc. PBSS5480XZ applications of single BJT transistors.