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BC546A A1G

BC546A A1G

BC546A A1G

Taiwan Semiconductor Corporation

BC546A A1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

SOT-23

BC546A A1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92
Operating Temperature -65°C~150°C TJ
Packaging Tape & Box (TB)
Published 2017
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 500mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Voltage - Collector Emitter Breakdown (Max) 65V
Current - Collector (Ic) (Max) 100mA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.292000 $0.292
10 $0.275472 $2.75472
100 $0.259879 $25.9879
500 $0.245169 $122.5845
1000 $0.231291 $231.291
BC546A A1G Product Details

BC546A A1G Overview


In this device, the DC current gain is 110 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Product comes in the supplier's device package TO-92.There is a 65V maximal voltage in the device due to collector-emitter breakdown.

BC546A A1G Features


the DC current gain for this device is 110 @ 2mA 5V
the supplier device package of TO-92

BC546A A1G Applications


There are a lot of Taiwan Semiconductor Corporation BC546A A1G applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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