2N3392 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N3392 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 2mA 4.5V
Current - Collector Cutoff (Max)
100nA ICBO
Voltage - Collector Emitter Breakdown (Max)
25V
Frequency - Transition
120MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.492000
$0.492
10
$0.464151
$4.64151
100
$0.437878
$43.7878
500
$0.413093
$206.5465
1000
$0.389710
$389.71
2N3392 PBFREE Product Details
2N3392 PBFREE Overview
This device has a DC current gain of 150 @ 2mA 4.5V, which is the ratio between the collector current and the base current.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2N3392 PBFREE Features
the DC current gain for this device is 150 @ 2mA 4.5V
2N3392 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N3392 PBFREE applications of single BJT transistors.