NSS12500UW3T2G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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NSS12500UW3T2G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-WDFN Exposed Pad
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
875mW
Terminal Position
DUAL
Frequency
100MHz
Base Part Number
NSS12500
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.5W
Case Connection
COLLECTOR
Power - Max
875mW
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
12V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
260mV @ 400mA, 4A
Collector Emitter Breakdown Voltage
12V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-200mV
Max Breakdown Voltage
12V
Collector Base Voltage (VCBO)
12V
Emitter Base Voltage (VEBO)
7V
hFE Min
250
Turn Off Time-Max (toff)
525ns
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.865920
$5.86592
10
$5.533887
$55.33887
100
$5.220648
$522.0648
500
$4.925140
$2462.57
1000
$4.646358
$4646.358
NSS12500UW3T2G Product Details
NSS12500UW3T2G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2A 2V.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.A VCE saturation (Max) of 260mV @ 400mA, 4A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 7V can result in a high level of efficiency.Parts of this part have transition frequencies of 100MHz.An input voltage of 12V volts is the breakdown voltage.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
NSS12500UW3T2G Features
the DC current gain for this device is 200 @ 2A 2V a collector emitter saturation voltage of -200mV the vce saturation(Max) is 260mV @ 400mA, 4A the emitter base voltage is kept at 7V a transition frequency of 100MHz
NSS12500UW3T2G Applications
There are a lot of ON Semiconductor NSS12500UW3T2G applications of single BJT transistors.