2SA1163-GR,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
2SA1163-GR,LF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
125°C TJ
Packaging
Tape & Reel (TR)
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
150mW
Reach Compliance Code
unknown
Power - Max
150mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
120V
Max Breakdown Voltage
120V
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
5V
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.052224
$0.052224
500
$0.038400
$19.2
1000
$0.032000
$32
2000
$0.029358
$58.716
5000
$0.027437
$137.185
10000
$0.025523
$255.23
15000
$0.024684
$370.26
50000
$0.024271
$1213.55
2SA1163-GR,LF Product Details
2SA1163-GR,LF Overview
In this device, the DC current gain is 200 @ 2mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor can be broken down at a voltage of 120V volts.In extreme cases, the collector current can be as low as 100mA volts.
2SA1163-GR,LF Features
the DC current gain for this device is 200 @ 2mA 6V the vce saturation(Max) is 300mV @ 1mA, 10mA the emitter base voltage is kept at 5V
2SA1163-GR,LF Applications
There are a lot of Toshiba Semiconductor and Storage 2SA1163-GR,LF applications of single BJT transistors.