2SB1709TL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
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2SB1709TL Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Package / Case
TO-236-3
Number of Pins
3
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Subcategory
Other Transistors
Voltage - Rated DC
-12V
Max Power Dissipation
500mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-1.5A
[email protected] Reflow Temperature-Max (s)
10
Pin Count
3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Transistor Application
AMPLIFIER
Gain Bandwidth Product
400MHz
Collector Emitter Voltage (VCEO)
12V
Max Collector Current
1.5A
Collector Emitter Breakdown Voltage
12V
Max Frequency
100MHz
Transition Frequency
400MHz
Collector Emitter Saturation Voltage
-85mV
Max Breakdown Voltage
12V
Collector Base Voltage (VCBO)
-15V
Emitter Base Voltage (VEBO)
-6V
hFE Min
270
DC Current Gain-Min (hFE)
270
Continuous Collector Current
-1.5A
Height
950μm
Length
3mm
Width
1.8mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$13.334960
$13.33496
10
$12.580151
$125.80151
100
$11.868067
$1186.8067
500
$11.196290
$5598.145
1000
$10.562537
$10562.537
2SB1709TL Product Details
2SB1709TL Overview
A collector emitter saturation voltage of -85mV allows maximum design flexibility.For high efficiency, the continuous collector voltage must be kept at -1.5A.An emitter's base voltage can be kept at -6V to gain high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1.5A.400MHz is present in the transition frequency.Single BJT transistor can take a breakdown input voltage of 12V volts.Collector current can be as low as 1.5A volts at its maximum.
2SB1709TL Features
a collector emitter saturation voltage of -85mV the emitter base voltage is kept at -6V the current rating of this device is -1.5A a transition frequency of 400MHz
2SB1709TL Applications
There are a lot of ROHM Semiconductor 2SB1709TL applications of single BJT transistors.