2N3715 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N3715 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Operating Temperature
-65°C~200°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
150W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 1A 2V
Vce Saturation (Max) @ Ib, Ic
800mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
10A
Frequency - Transition
4MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.703000
$5.703
10
$5.380189
$53.80189
100
$5.075650
$507.565
500
$4.788349
$2394.1745
1000
$4.517310
$4517.31
2N3715 PBFREE Product Details
2N3715 PBFREE Overview
This device has a DC current gain of 50 @ 1A 2V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.This device displays a 60V maximum voltage - Collector Emitter Breakdown.
2N3715 PBFREE Features
the DC current gain for this device is 50 @ 1A 2V the vce saturation(Max) is 800mV @ 500mA, 5A
2N3715 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N3715 PBFREE applications of single BJT transistors.