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2PB709ARW,115

  • 2PB709ARW,115
  • 2PB709ARW,115

2PB709ARW,115

2PB709ARW,115

Nexperia USA Inc.

2PB709ARW,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

2PB709ARW,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 70MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2PB709A
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Gain Bandwidth Product 70MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 210 @ 2mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 70MHz
Collector Base Voltage (VCBO) 45V
Emitter Base Voltage (VEBO) 6V
hFE Min 210
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.03450 $0.1035
2PB709ARW,115 Product Details

2PB709ARW,115 Overview


DC current gain in this device equals 210 @ 2mA 10V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.The part has a transition frequency of 70MHz.During maximum operation, collector current can be as low as 100mA volts.

2PB709ARW,115 Features


the DC current gain for this device is 210 @ 2mA 10V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 70MHz

2PB709ARW,115 Applications


There are a lot of Nexperia USA Inc. 2PB709ARW,115 applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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