2SC5662T2LP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SC5662T2LP Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Contact Plating
Copper, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-723
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Tin/Copper (Sn/Cu)
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
11V
Max Power Dissipation
150mW
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
50mA
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SC5662
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
150mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
3.2 GHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
11V
Max Collector Current
50mA
DC Current Gain (hFE) (Min) @ Ic, Vce
82 @ 5mA 10V
Current - Collector Cutoff (Max)
500nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 10mA
Collector Emitter Breakdown Voltage
11V
Transition Frequency
3200MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
11V
Collector Base Voltage (VCBO)
20V
Emitter Base Voltage (VEBO)
3V
hFE Min
56
Continuous Collector Current
50mA
Highest Frequency Band
S B
Collector-Base Capacitance-Max
1.5pF
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.198360
$0.19836
10
$0.187132
$1.87132
100
$0.176540
$17.654
500
$0.166547
$83.2735
1000
$0.157120
$157.12
2SC5662T2LP Product Details
2SC5662T2LP Overview
In this device, the DC current gain is 82 @ 5mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltages of 50mA should be maintained to achieve high efficiency.An emitter's base voltage can be kept at 3V to gain high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (50mA).3200MHz is present in the transition frequency.This device can take an input voltage of 11V volts before it breaks down.Collector current can be as low as 50mA volts at its maximum.
2SC5662T2LP Features
the DC current gain for this device is 82 @ 5mA 10V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 5mA, 10mA the emitter base voltage is kept at 3V the current rating of this device is 50mA a transition frequency of 3200MHz
2SC5662T2LP Applications
There are a lot of ROHM Semiconductor 2SC5662T2LP applications of single BJT transistors.