FZT658TA Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 200mA 10V.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 10mA, 100mA.Maintaining the continuous collector voltage at 500mA is essential for high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).50MHz is present in the transition frequency.Input voltage breakdown is available at 400V volts.When collector current reaches its maximum, it can reach 500mA volts.

FZT658TA Features

the DC current gain for this device is 40 @ 200mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 50MHz

FZT658TA Applications

There are a lot of Diodes Incorporated FZT658TA applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter