2N4126 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N4126 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 2mA 1V
Current - Collector Cutoff (Max)
50nA ICBO
Voltage - Collector Emitter Breakdown (Max)
25V
Frequency - Transition
250MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.475000
$0.475
10
$0.448113
$4.48113
100
$0.422748
$42.2748
500
$0.398819
$199.4095
1000
$0.376244
$376.244
2N4126 PBFREE Product Details
2N4126 PBFREE Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 2mA 1V.There is a 25V maximal voltage in the device due to collector-emitter breakdown.
2N4126 PBFREE Features
the DC current gain for this device is 120 @ 2mA 1V
2N4126 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N4126 PBFREE applications of single BJT transistors.