SBC847CWT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
SBC847CWT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Surface Mount
YES
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
150mW
Pin Count
3
Configuration
Single
Power - Max
150mW
Halogen Free
Halogen Free
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
600mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
50V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.07446
$0.22338
6,000
$0.06732
$0.40392
15,000
$0.06018
$0.9027
30,000
$0.05661
$1.6983
75,000
$0.05066
$3.7995
SBC847CWT1G Product Details
SBC847CWT1G Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.100MHz is present in the transition frequency.In extreme cases, the collector current can be as low as 100mA volts.
SBC847CWT1G Features
the DC current gain for this device is 420 @ 2mA 5V the vce saturation(Max) is 600mV @ 5mA, 100mA a transition frequency of 100MHz
SBC847CWT1G Applications
There are a lot of ON Semiconductor SBC847CWT1G applications of single BJT transistors.