2SC5242-O(Q) Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 1A 5V.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 800mA, 8A.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 15A.In the part, the transition frequency is 30MHz.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.

2SC5242-O(Q) Features

the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 30MHz

2SC5242-O(Q) Applications

There are a lot of Toshiba Semiconductor and Storage 2SC5242-O(Q) applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver