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FZT458TA

FZT458TA

FZT458TA

Diodes Incorporated

FZT458TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT458TA Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 400V
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 300mA
Frequency 50MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FZT458
JESD-30 Code R-PDSO-G4
Number of Elements 1
Voltage 400V
Element Configuration Single
Current 3A
Power Dissipation 3W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 500mV @ 6mA, 50mA
Collector Emitter Breakdown Voltage 400V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 400V
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 300mA
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.213689 $0.213689
10 $0.201594 $2.01594
100 $0.190183 $19.0183
500 $0.179418 $89.709
1000 $0.169262 $169.262
FZT458TA Product Details

FZT458TA Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 50mA 10V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 6mA, 50mA.Maintaining the continuous collector voltage at 300mA is essential for high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 300mA current rating.In this part, there is a transition frequency of 50MHz.This device can take an input voltage of 400V volts before it breaks down.In extreme cases, the collector current can be as low as 300mA volts.

FZT458TA Features


the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 50MHz

FZT458TA Applications


There are a lot of Diodes Incorporated FZT458TA applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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