2N5088 PBFREE

join

new-10%

Manufacturer part number:2N5088 PBFREE

Manufacturer:Central Semiconductor Corp

Description:2N5088 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

Case Package:SOT-23

Datasheet:2N5088 PBFREE Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature	-65°C~150°C TJ
Packaging	Bulk
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power - Max	625mW
Transistor Type	NPN
DC Current Gain (hFE) (Min) @ Ic, Vce	300 @ 100μA 5V
Current - Collector Cutoff (Max)	50nA ICBO
Vce Saturation (Max) @ Ib, Ic	500mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	50mA
Frequency - Transition	50MHz
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$0.417417	$0.417417
10	$0.393789	$3.93789
100	$0.371500	$37.15
500	$0.350471	$175.2355
1000	$0.330633	$330.633

2N5088 PBFREE Overview

In this device, the DC current gain is 300 @ 100μA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 1mA, 10mA.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.