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2N5308 PBFREE

  • 2N5308 PBFREE
  • 2N5308 PBFREE

2N5308 PBFREE

2N5308 PBFREE

Central Semiconductor Corp

2N5308 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

2N5308 PBFREE Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature -65°C~150°C TJ
Packaging Bulk
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 625mW
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 7000 @ 2mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.4V @ 200μA, 200mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 300mA
Frequency - Transition 60MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.240000 $1.24
10 $1.169811 $11.69811
100 $1.103596 $110.3596
500 $1.041128 $520.564
1000 $0.982196 $982.196
2N5308 PBFREE Product Details

2N5308 PBFREE Overview


DC current gain in this device equals 7000 @ 2mA 5V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.4V @ 200μA, 200mA.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

2N5308 PBFREE Features


the DC current gain for this device is 7000 @ 2mA 5V
the vce saturation(Max) is 1.4V @ 200μA, 200mA

2N5308 PBFREE Applications


There are a lot of Central Semiconductor Corp 2N5308 PBFREE applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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