PBSS9110X,135 Overview

In this device, the DC current gain is 150 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V allows for a high level of efficiency.In the part, the transition frequency is 100MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.Maximum collector currents can be below 1A volts.

PBSS9110X,135 Features

the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 320mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

PBSS9110X,135 Applications

There are a lot of Nexperia USA Inc. PBSS9110X,135 applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter