2N5322 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N5322 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Surface Mount
NO
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Configuration
Single
Power - Max
10W
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 500mA 4V
Current - Collector Cutoff (Max)
500nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
75V
Current - Collector (Ic) (Max)
2A
Transition Frequency
50MHz
Frequency - Transition
50MHz
Power Dissipation-Max (Abs)
10W
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.661000
$2.661
10
$2.510377
$25.10377
100
$2.368281
$236.8281
500
$2.234227
$1117.1135
1000
$2.107761
$2107.761
2N5322 PBFREE Product Details
2N5322 PBFREE Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 500mA 4V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.There is a transition frequency of 50MHz in the part.Detection of Collector Emitter Breakdown at 75V maximal voltage is present.
2N5322 PBFREE Features
the DC current gain for this device is 30 @ 500mA 4V the vce saturation(Max) is 700mV @ 50mA, 500mA a transition frequency of 50MHz
2N5322 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N5322 PBFREE applications of single BJT transistors.