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2N5885 PBFREE

2N5885 PBFREE

2N5885 PBFREE

Central Semiconductor Corp

2N5885 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

2N5885 PBFREE Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Operating Temperature-65°C~200°C TJ
PackagingTube
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 200W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 10A 4V
Current - Collector Cutoff (Max) 2mA
Vce Saturation (Max) @ Ib, Ic 4V @ 6.25A, 25A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 25A
Frequency - Transition 4MHz
RoHS StatusROHS3 Compliant
In-Stock:1024 items

2N5885 PBFREE Product Details

2N5885 PBFREE Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 10A 4V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 4V @ 6.25A, 25A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

2N5885 PBFREE Features


the DC current gain for this device is 20 @ 10A 4V
the vce saturation(Max) is 4V @ 6.25A, 25A

2N5885 PBFREE Applications


There are a lot of Central Semiconductor Corp 2N5885 PBFREE applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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