2N5885 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N5885 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Operating Temperature
-65°C~200°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
200W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 10A 4V
Current - Collector Cutoff (Max)
2mA
Vce Saturation (Max) @ Ib, Ic
4V @ 6.25A, 25A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
25A
Frequency - Transition
4MHz
RoHS Status
ROHS3 Compliant
2N5885 PBFREE Product Details
2N5885 PBFREE Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 10A 4V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 4V @ 6.25A, 25A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2N5885 PBFREE Features
the DC current gain for this device is 20 @ 10A 4V the vce saturation(Max) is 4V @ 6.25A, 25A
2N5885 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N5885 PBFREE applications of single BJT transistors.