KST05MTF Overview

This device has a DC current gain of 50 @ 100mA 1V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at 4V for high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.Parts of this part have transition frequencies of 100MHz.As a result, it can handle voltages as low as 60V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

KST05MTF Features

the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz

KST05MTF Applications

There are a lot of ON Semiconductor KST05MTF applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver