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KST05MTF

KST05MTF

KST05MTF

ON Semiconductor

KST05MTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KST05MTF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 350mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 500mA
Frequency 100MHz
Base Part Number KST05
Number of Elements 1
Element Configuration Single
Power Dissipation 350mW
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 60V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 250mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 4V
hFE Min 50
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.231318 $0.231318
10 $0.218225 $2.18225
100 $0.205872 $20.5872
500 $0.194219 $97.1095
1000 $0.183225 $183.225
KST05MTF Product Details

KST05MTF Overview


This device has a DC current gain of 50 @ 100mA 1V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at 4V for high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.Parts of this part have transition frequencies of 100MHz.As a result, it can handle voltages as low as 60V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

KST05MTF Features


the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz

KST05MTF Applications


There are a lot of ON Semiconductor KST05MTF applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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