BCX41E6327HTSA1 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 200mA 1V.A collector emitter saturation voltage of 900mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 900mV @ 30mA, 300mA.The emitter base voltage can be kept at 5V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 800mA current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor can take a breakdown input voltage of 125V volts.During maximum operation, collector current can be as low as 800mA volts.

BCX41E6327HTSA1 Features

the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 900mV
the vce saturation(Max) is 900mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz

BCX41E6327HTSA1 Applications

There are a lot of Infineon Technologies BCX41E6327HTSA1 applications of single BJT transistors.

• Driver
• Muting
• Inverter
• Interface