BCX41E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BCX41E6327HTSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Voltage - Rated DC
125V
Max Power Dissipation
330mW
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
800mA
Frequency
100MHz
Base Part Number
BCX41
Number of Elements
1
Voltage
125V
Element Configuration
Single
Current
8A
Power Dissipation
330mW
Transistor Application
SWITCHING
Halogen Free
Not Halogen Free
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
1V
Max Collector Current
800mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 200mA 1V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
900mV @ 30mA, 300mA
Collector Emitter Breakdown Voltage
125V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
900mV
Max Breakdown Voltage
125V
Collector Base Voltage (VCBO)
125V
Emitter Base Voltage (VEBO)
5V
hFE Min
63
Height
900μm
Length
2.9mm
Width
1.3mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.055440
$0.05544
500
$0.040765
$20.3825
1000
$0.033971
$33.971
2000
$0.031166
$62.332
5000
$0.029127
$145.635
10000
$0.027095
$270.95
15000
$0.026204
$393.06
50000
$0.025766
$1288.3
BCX41E6327HTSA1 Product Details
BCX41E6327HTSA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 200mA 1V.A collector emitter saturation voltage of 900mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 900mV @ 30mA, 300mA.The emitter base voltage can be kept at 5V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 800mA current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor can take a breakdown input voltage of 125V volts.During maximum operation, collector current can be as low as 800mA volts.
BCX41E6327HTSA1 Features
the DC current gain for this device is 40 @ 200mA 1V a collector emitter saturation voltage of 900mV the vce saturation(Max) is 900mV @ 30mA, 300mA the emitter base voltage is kept at 5V the current rating of this device is 800mA a transition frequency of 100MHz
BCX41E6327HTSA1 Applications
There are a lot of Infineon Technologies BCX41E6327HTSA1 applications of single BJT transistors.