2N708 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N708 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Packaging
Bulk
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 10mA 1V
Current - Collector Cutoff (Max)
25μA ICBO
Voltage - Collector Emitter Breakdown (Max)
15V
Frequency - Transition
400MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.74000
$6.74
500
$6.6726
$3336.3
1000
$6.6052
$6605.2
1500
$6.5378
$9806.7
2000
$6.4704
$12940.8
2500
$6.403
$16007.5
2N708 PBFREE Product Details
2N708 PBFREE Overview
In this device, the DC current gain is 30 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The device exhibits a collector-emitter breakdown at 15V.
2N708 PBFREE Features
the DC current gain for this device is 30 @ 10mA 1V
2N708 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N708 PBFREE applications of single BJT transistors.