2SD1618T-TD-E Overview

DC current gain in this device equals 200 @ 50mA 2V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 80mV.A VCE saturation (Max) of 80mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at 5V to gain high efficiency.A transition frequency of 250MHz is present in the part.Single BJT transistor is possible for the collector current to fall as low as 700mA volts at Single BJT transistors maximum.

2SD1618T-TD-E Features

the DC current gain for this device is 200 @ 50mA 2V
a collector emitter saturation voltage of 80mV
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz

2SD1618T-TD-E Applications

There are a lot of ON Semiconductor 2SD1618T-TD-E applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver