JAN2N2369A Overview
This device has a DC current gain of 20 @ 100mA 1V, which is the ratio between the base current and the collector current.When VCE saturation is 450mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 4.5V can result in a high level of efficiency.As you can see, the part has a transition frequency of 500MHz.A maximum collector current of 400nA volts can be achieved.
JAN2N2369A Features
the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
the emitter base voltage is kept at 4.5V
a transition frequency of 500MHz
JAN2N2369A Applications
There are a lot of Microsemi Corporation JAN2N2369A applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
