SBC807-25WT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.A maximum collector current of 500mA volts can be achieved.
SBC807-25WT1G Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
SBC807-25WT1G Applications
There are a lot of ON Semiconductor SBC807-25WT1G applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
