BDV65B

new-10%

Manufacturer part number:BDV65B

Manufacturer:Central Semiconductor Corp

Description:POWER TRANSISTOR NPN TO218

Case Package:SOT-23

Datasheet:BDV65B Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-218-3
Transistor Element Material	SILICON
Packaging	Bulk
JESD-609 Code	e0
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
HTS Code	8541.29.00.75
Subcategory	Other Transistors
Max Power Dissipation	125W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Operating Temperature (Max)	150°C
Number of Elements	1
Configuration	DARLINGTON
Case Connection	COLLECTOR
Transistor Application	AMPLIFIER
Polarity/Channel Type	NPN
Transistor Type	NPN
Max Collector Current	12A
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 5A 4V
Collector Emitter Breakdown Voltage	100V
Current - Collector (Ic) (Max)	12A
Transition Frequency	60MHz
Frequency - Transition	60MHz
RoHS Status	Non-RoHS Compliant