BDW83C datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
BDW83C Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-218-3
Transistor Element Material
SILICON
Packaging
Bulk
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Max Power Dissipation
130W
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Operating Temperature (Max)
150°C
Number of Elements
1
Configuration
DARLINGTON
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 6A 3V
Collector Emitter Breakdown Voltage
100V
Current - Collector (Ic) (Max)
15A
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
600
$1.92253
$1153.518
BDW83C Product Details
BDW83C Overview
This device has a DC current gain of 750 @ 6A 3V, which is the ratio between the base current and the collector current.During maximum operation, collector current can be as low as 15A volts.
BDW83C Features
the DC current gain for this device is 750 @ 6A 3V
BDW83C Applications
There are a lot of Central Semiconductor Corp BDW83C applications of single BJT transistors.