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BDW83C

BDW83C

BDW83C

Central Semiconductor Corp

BDW83C datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

BDW83C Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-218-3
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.29.00.95
Subcategory Other Transistors
Max Power Dissipation 130W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration DARLINGTON
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 6A 3V
Collector Emitter Breakdown Voltage 100V
Current - Collector (Ic) (Max) 15A
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
600 $1.92253 $1153.518
BDW83C Product Details

BDW83C Overview


This device has a DC current gain of 750 @ 6A 3V, which is the ratio between the base current and the collector current.During maximum operation, collector current can be as low as 15A volts.

BDW83C Features


the DC current gain for this device is 750 @ 6A 3V

BDW83C Applications


There are a lot of Central Semiconductor Corp BDW83C applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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