MJ11030G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJ11030G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mounting Type
Through Hole
Package / Case
TO-204AE
Surface Mount
NO
Number of Pins
2
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Tray
Published
2008
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory
Other Transistors
Voltage - Rated DC
90V
Max Power Dissipation
300W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
260
Current Rating
50A
[email protected] Reflow Temperature-Max (s)
40
Pin Count
2
Qualification Status
Not Qualified
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
90V
Max Collector Current
50A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 25A 5V
Current - Collector Cutoff (Max)
2mA
Vce Saturation (Max) @ Ib, Ic
3.5V @ 500mA, 50A
Collector Emitter Breakdown Voltage
90V
Collector Emitter Saturation Voltage
2.5V
Collector Base Voltage (VCBO)
90V
Emitter Base Voltage (VEBO)
5V
RoHS Status
RoHS Compliant
Lead Free
Lead Free
MJ11030G Product Details
MJ11030G Overview
In this device, the DC current gain is 1000 @ 25A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2.5V ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 50A for this device.When collector current reaches its maximum, it can reach 50A volts.
MJ11030G Features
the DC current gain for this device is 1000 @ 25A 5V a collector emitter saturation voltage of 2.5V the vce saturation(Max) is 3.5V @ 500mA, 50A the emitter base voltage is kept at 5V the current rating of this device is 50A
MJ11030G Applications
There are a lot of ON Semiconductor MJ11030G applications of single BJT transistors.