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BCP5616E6327HTSA1

BCP5616E6327HTSA1

BCP5616E6327HTSA1

Infineon Technologies

BCP5616E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCP5616E6327HTSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2009
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BCP56
Power - Max 2W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 100MHz
RoHS StatusRoHS Compliant
In-Stock:1130 items

BCP5616E6327HTSA1 Product Details

BCP5616E6327HTSA1 Overview


This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.There is a 80V maximal voltage in the device due to collector-emitter breakdown.

BCP5616E6327HTSA1 Features


the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA

BCP5616E6327HTSA1 Applications


There are a lot of Infineon Technologies BCP5616E6327HTSA1 applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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