BC807-16LT3 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.This design offers maximum flexibility with a collector emitter saturation voltage of -700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As you can see, the part has a transition frequency of 100MHz.In extreme cases, the collector current can be as low as 500mA volts.
BC807-16LT3 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC807-16LT3 Applications
There are a lot of ON Semiconductor BC807-16LT3 applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
