DXTP19020DP5-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DXTP19020DP5-13 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
PowerDI™ 5
Number of Pins
5
Transistor Element Material
SILICON
Manufacturer Package Identifier
POWERDI-5
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2016
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
3W
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
DXTP19020
Pin Count
3
JESD-30 Code
R-PDSO-F3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
3W
Transistor Application
SWITCHING
Gain Bandwidth Product
176MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
275mV
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 100mA 2V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
275mV @ 800mA, 8A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
176MHz
Collector Emitter Saturation Voltage
-1.15V
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
-25V
Emitter Base Voltage (VEBO)
-7V
Continuous Collector Current
-8A
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.685440
$0.68544
10
$0.646642
$6.46642
100
$0.610039
$61.0039
500
$0.575509
$287.7545
1000
$0.542933
$542.933
DXTP19020DP5-13 Product Details
DXTP19020DP5-13 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 100mA 2V.With a collector emitter saturation voltage of -1.15V, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 275mV @ 800mA, 8A.Maintaining the continuous collector voltage at -8A is essential for high efficiency.Keeping the emitter base voltage at -7V can result in a high level of efficiency.As you can see, the part has a transition frequency of 176MHz.A breakdown input voltage of 20V volts can be used.When collector current reaches its maximum, it can reach 8A volts.
DXTP19020DP5-13 Features
the DC current gain for this device is 300 @ 100mA 2V a collector emitter saturation voltage of -1.15V the vce saturation(Max) is 275mV @ 800mA, 8A the emitter base voltage is kept at -7V a transition frequency of 176MHz
DXTP19020DP5-13 Applications
There are a lot of Diodes Incorporated DXTP19020DP5-13 applications of single BJT transistors.