MMBTA06LT1HTSA1 Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.When VCE saturation is 250mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 4V allows for a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.As a result, it can handle voltages as low as 80V volts.Supplier package SOT-23-3 contains the product.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.Collector current can be as low as 500mA volts at its maximum.
MMBTA06LT1HTSA1 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
the supplier device package of SOT-23-3
MMBTA06LT1HTSA1 Applications
There are a lot of Infineon Technologies MMBTA06LT1HTSA1 applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
