Welcome to Hotenda.com Online Store!

logo
userjoin
Home

PMSTA06,115

PMSTA06,115

PMSTA06,115

Nexperia USA Inc.

PMSTA06,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PMSTA06,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number PMSTA06
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 100MHz
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 4V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.363431 $0.363431
10 $0.342859 $3.42859
100 $0.323452 $32.3452
500 $0.305144 $152.572
1000 $0.287871 $287.871
PMSTA06,115 Product Details

PMSTA06,115 Overview


DC current gain in this device equals 50 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.Collector current can be as low as 500mA volts at its maximum.

PMSTA06,115 Features


the DC current gain for this device is 50 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
a transition frequency of 100MHz

PMSTA06,115 Applications


There are a lot of Nexperia USA Inc. PMSTA06,115 applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News