CJD31C TR13 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
CJD31C TR13 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Operating Temperature
-65°C~150°C TJ
Packaging
Cut Tape (CT)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
Other Transistors
Configuration
Single
Power - Max
1.56W
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 3A 4V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 375mA, 3A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
3A
Transition Frequency
3MHz
Frequency - Transition
3MHz
Power Dissipation-Max (Abs)
15W
RoHS Status
ROHS3 Compliant
CJD31C TR13 PBFREE Product Details
CJD31C TR13 PBFREE Overview
In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 375mA, 3A.There is a transition frequency of 3MHz in the part.There is a 100V maximal voltage in the device due to collector-emitter breakdown.
CJD31C TR13 PBFREE Features
the DC current gain for this device is 10 @ 3A 4V the vce saturation(Max) is 1.2V @ 375mA, 3A a transition frequency of 3MHz
CJD31C TR13 PBFREE Applications
There are a lot of Central Semiconductor Corp CJD31C TR13 PBFREE applications of single BJT transistors.