CMUT5551 TR PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
CMUT5551 TR PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
17 Weeks
Mounting Type
Surface Mount
Package / Case
SC-89, SOT-490
Surface Mount
YES
Operating Temperature
-65°C~150°C TJ
Packaging
Cut Tape (CT)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
Other Transistors
Configuration
Single
Power - Max
250mW
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
160V
Current - Collector (Ic) (Max)
600mA
Transition Frequency
100MHz
Frequency - Transition
300MHz
Power Dissipation-Max (Abs)
0.25W
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.38000
$0.38
500
$0.3762
$188.1
1000
$0.3724
$372.4
1500
$0.3686
$552.9
2000
$0.3648
$729.6
2500
$0.361
$902.5
CMUT5551 TR PBFREE Product Details
CMUT5551 TR PBFREE Overview
In this device, the DC current gain is 80 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 5mA, 50mA.Parts of this part have transition frequencies of 100MHz.Single BJT transistor shows a 160V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
CMUT5551 TR PBFREE Features
the DC current gain for this device is 80 @ 10mA 5V the vce saturation(Max) is 200mV @ 5mA, 50mA a transition frequency of 100MHz
CMUT5551 TR PBFREE Applications
There are a lot of Central Semiconductor Corp CMUT5551 TR PBFREE applications of single BJT transistors.